Franklin L. DUAN
5620 Schoolfield Dr, Centreville, VA22022. (703) 631-3810
 lduan@site.gmu.edu ·   · http://site.gmu.edu/~lduan

OBJECTIVE

Research and/or Engineering on microelectronics or semiconductor industry, on design and technology of semiconductor device and circuit. EDUCATION Ph.D., Electrical & Computer Engineering. Expected graduation in May 1998. GPA 4.0. School of Information Technology & Engineering (SITE), George Mason University, Fairfax, Virginia. Ph.D. research on physics, design and technology of semiconductor devices and circuits, esp. SOI MOSFET & ULSI.
M.S., Electrical Engineering. December 1987. GPA 3.2. Institute of Microelectronics, Tsinghua University, Beijing, China. Research on VLSI processes.
B.Sc., Electrical Engineering. July 1985. GPA 3.3. Tsinghua University, Beijing, China. PROFESSIONAL EXPERIENCE Process Engineer, Singapore Technology, Chartered Semiconductor Manufacturing. May 1992-December 1992. Process integration and semiconductor chip manufacturing of 0.8um VLSI technology.
Research Associate, Institute of Semiconductors, Chinese Academy of Sciences, China. December 1987-January 1991. Physics of superconductor devices and III-V compound semiconductors.
Chief Engineer, Haida Corporation, Beijing, China. January 1991-May 1992. Sale and customer service of computer hardware and software. PROFESSIONAL SKILLS Semiconductor Simulation: 4 years' experience of using semiconductor simulation tools, including process simulation--SUPREM, device simulation--PISCES, and circuit simulation--SPICE. Semiconductor Characterization: Comprehensive measurements on semiconductor transistors (esp. on MOSFETs and SOI MOSFETs). I-V characterization and hot carrier degradation test, using HP 4145 Semiconductor Parameter Analyzer together with the Pulse Generators, PCs... Computer Skills:
  • Operating System: UNIX, DOS, Win95, and HP
  • Programming Language and Software Utility: C(C++), HP BASIC, and HTML. Microsoft Office and NETSCAPE. QuatroPro, Lotus, Matlab, PaintShop...
  • Computer Aided Measurement: Interface language programming on electronic equipment like HP4145 and HP Pulse Generator by PC.
    •      AWARDS AND HONORS 1995, 1997 Fellowship in George Mason University PROFESSIONAL MEMBERSHIP IEEE Student Membership from 1992
    Who’s Who in Science and Engineering from 1998     REFERENCES PUBLICATIONS See separated

     
     

    Publications



    1. Franklin L. Duan, Dimitris E. Ioannou, Shankar P. Sinha, and Frederick T. Brady,  “LDD Design Tradeoffs for Self Latch-Up and Hot Carrier Degradation Control in Accumulation Mode FD SOI MOSFET’s”, IEEE Transactions on Electron Devices, vol. 44, pp.972-977, 1997.

    2. F.L. Duan, X.Zhao, D.E. Ioannou, H.L. Hughes and S.T. Liu, “Detrimental Edge Effects on the Floating Body Phenomena in SOI MOSFETs”, Symposium of 192nd International Meeting of the Electrochemical Society, Inc., pp.239-245, 1997.

    3. Franklin L. Duan and Dimitris E. Ioannou, “Design and Analysis of a Novel Mixed Accumulation/Inversion Mode FD SOI MOSFET”, 1997 IEEE International SOI Conference Proceedings, pp.100-101, 1997.

    4. Franklin L. Duan, Dimitris E. Ioannou, Harold L. Hughes and Mike Liu, “Channel Coupling Imposed Tradeoffs Between Hot Carrier Degradation and Single Transistor Latch-Up in FD SOI MOSFET’s”, IEEE International Reliability Physics Symposium, pp.194-202, 1998.

    5. Dimitris E. Ioannou, Franklin  L. Duan, Shankar P. Sinha, and Andrej Zaleski, “Opposite-Channel-Based Injection (OCBI) of Hot-Carriers in SOI MOSFET’s: Physics and Applications”, IEEE Transaction on Electron Devices, vol.45, May 1998.

    6. D.E. Ioannou, F.L. Duan, and X. Zhao, “SIMOX Substrate and MOSFET’s for Enhanced Reliability and Performance”, 1997 International Semiconductor Device Research Symposium, pp.627-630, 1997.

    7. Dimitris E. Ioannou, Franklin L. Duan, Williams C. Jenkins, and Harold L. Hughes, “Channel Coupling Imposed Tradeoffs on Fully-Depleted (FD) SOI MOSFET’s”, submitted to ESSDREC’98.

    8. X. Zhao F.L. Duan, A. Thanailakis, D.E. Ioannou, R.K. Lawrence, and H.L. Hughes, “Hole Trap Investigation in Supplemental Oxygen SIMOX Wafers by Opposite Channel Based Charge Injection”, 1997 IEEE International SOI Conference Proceedings, pp.116-117, 1997.

    9. Shankar P. Sinha, Franklin L. Duan, Dimitris E. Ioannou, William C. Jenkins, and Harold L. Hughes, “Time Dependence Power Laws of Hot Carrier Degradation in SOI MOSFET’s”, 1996 IEEE International SOI Conference Proceedings, pp.18-19, 1996.

    10. S. P. Sinha, F.L. Duan, D.E. Ioannou, William C. Jenkins, Harold L. Hughes, and M.S. Liu, “Hot Carrier Degradation of Fully Depleted SIMOX MOSFET’s”, Proceedings of the 7th International Symposium On Silicon-On-Insulator Technology and Devices, pp.324-329, 1996.


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